source ion
英 [sɔːs ˈaɪən]
美 [sɔːrs ˈaɪən]
【医】离子源
双语例句
- Determination of Hydrogen Chloride in Waste Gas of Pollution Source by Ion Chromatography
离子色谱法测定污染源废气中的氯化氢 - Two-dimensional Particle-in-Cell Simulation of Plasma Source Ion Implantation for Loop Sample
环状样品等离子体源离子注入过程两维Particle-in-Cell计算机模拟 - Students who are interested on ion source and ion beam optics and engineering of neutral beam injection are welcomed.
目前主要从事中性束技术的研究，可招收物理工程类专业的研究生。 - PIC Simulation of Grid-Shadow Effect in Plasma Source Ion Implantation
等离子体源离子注入中的栅网阴影效应的离子动力学PIC模拟 - A simple and convenient system used to measure the workpiece temperature fast and exactly for plasma source ion implantation ( PSII) is developed. The method of dynamic workpiece temperature measurement using double thermocouples is introduced.
研制了快速、准确、简单地测定PSII靶温度的系统，提出了用双元检测法动态测量PSII靶温度的方法。 - XPS Studies of Synthesized B C N Films by Plasma Source Ion Nitriding
合成硼碳氮体系薄膜的XPS研究 - The temporal and spatial evolution of a dusty plasma sheath in plasma source ion implantation has been investigated with a fluid theory and a self-consistent dust-charging model. A negative potential pulse is introduced to form the plasma sheath.
采用流体模型及自洽的尘埃粒子充电模型，我们研究了等离子体源离子注入时的尘埃等离子体鞘层的时空演化。 - To improve greatly the implantation efficiency and reduce the cost are the key to the industrial applications of MEVVA ( Metal Vapor Vacuum Arc) source ion implantation.
提高金属蒸汽真空弧（MetalVaporVacuumArc，MEVVA）离子源注入机的注入效率，大幅度降低注入成本是MEVVA源离子注入技术实用化的关键。 - For example, to metal like stainless steel, N 2 ion source ion implantation can form iron's nitrides like Fe 2N, Fe 3 and Fe 4N which can improve its microhardness and corrosion resistance;
对金属如不锈钢等用氮气等离子源离子注入，可以在表面形成Fe2N，Fe3N和Fe4N的铁的氮化物，提高表面的硬度和耐腐蚀性能； - Friction and Wear Behavior of the Modified Layer of Aluminum Alloy Implanted with Nitrogen and Titanium by Plasma Source Ion Implantation
氮及钛等离子体基离子注入铝合金表面改性层的摩擦磨损性能研究 - Study and Application on Surface Modification by Plasma Source Ion Implantation
等离子体源离子注入表面改性研究及应用 - The temporal evolution of the plasma sheath during plasma source ion implantation ( PSII) is crucial because it affects the resultant surface properties and structures.
等离子体源离子注入过程中，鞘层的演化规律直接影响到离子注入到材料中的深度进而影响材料表面的性质和结构，对材料的不同部位这种影响是不同的。 - Numerical simulation of collisional sheath evolution in plasma source ion implantation
等离子体源离子注入鞘层时空演化的研究 - Computer simulation of sheath evolution in planar target for plasma source ion implantation
等离子体源离子注入装置中平面靶鞘层时空演化的计算机模拟 - Plasma source ion implantation is a new non-line of sight ion implantation technique for surface modification of materials.
等离子体源离子注入技术是一种新型的非视线的离子注入材料表面改性技术。 - In this paper, a glow discharge plasma source ion implantation technique is described.
本文叙述了辉光放电等离子体源的等离子体源离子注入。 - This paper has discussed preparing Diamond-like Carbon films by means of micro-wave ECR plasma source ion implantation and plasma enhanced chemical vapour deposition.
本文探讨了利用微波ECR全方位离子注入技术和等离子增强化学气相沉积技术来制备类金刚石膜。 - B-C-N Films Synthesized by Plasma Source Ion Nitriding
等离子体源离子渗氮合成硼碳氮薄膜的研究 - Plasma Source Ion Implantation Surface Modification of Titanium Alloy
钛合金等离子体源离子注入表面改性 - Plasma source ion implantation ( psil) in a magnetic well configuration
磁阱等离子体源离子注入研究 - Microwave ECR plasma source ion implantation on aluminum alloy
微波ECR等离子体中铝合金的全方位氮离子注入 - The application of plasma source ion implantation technique to the oil distributing disk of aeronautical hydraulic pump was studied.
对等离子体源离子注入技术在航空液压泵配油盘上的应用进行了研究。 - Effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation
附加电极半径对空心圆管端点附近离子注入剂量的影响 - TiN coating for inner surface modification by grid enhanced plasma source ion implantation
内表面栅极等离子体源离子注入TiN薄膜及其特性研究 - Plasma source ion implantation ( PSII) is one of the most important technology for surface modification of materials, and it has mainly been applied to metals and semiconductors.
等离子体源离子注入（PSII）作为一种重要的材料表面加工改性技术，主要被应用于金属及半导体材料表面改性领域。 - Recently plasma source ion implantation ( PSII) has been widely applied to modify the surface properties of materials.
近年来，等离子体源离子注入（PSII）在改善材料表面性能方面得到了广泛应用。 - Plasma source ion implantation ( PSII) has been widely used in surface modification and semiconductor fabrication.
等离子体源离子注入（PSII）已经广泛应用于材料表面改性和半导体加工领域。 - A new plasma source ion implantation device for inner and outer surface implantation of materials has been developed.
本文研制了一套可同时用于材料内外表面注入的新型等离子体源离子注入装置。 - In direct-current plasma immersion ion implantation ( DC-PIII) process and grid-enhanced plasma source ion implantation ( GEPSII) process, uniform ion implantation is crucial to semiconductor processing and surface modification of materials.
直流等离子体源离子注入（直流PIII）技术和栅极增强型等离子体源离子注入技术在半导体工艺和材料表面改性中十分重要。而在这些工艺中，离子注入均匀性是至关重要的。